Abstract
A low noise detection system using an pin photodiode for near infra-red spectroscopic measurement was developed. The InGaAs pin photodiode is more suitable than the Ge pin photodiode for detecting low level light as regards dark current and quantum efficiency. The detection system consists of an InGaAs pin photodiode with a charge integrating amplifier (InGaAs-CIA) operated at 77 K. The minimum detectable power of 10−16 W was achieved at 1.28 μm wavelength.
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