Comparison of InAs/GaAs and InGaAs/GaAs quantum dot solar cells and effect of post-growth annealing on their optical properties

Debiprasad Panda,Samim Sardar,Subhananda Chakrabarti,Akshay Balgarkashi,Samir Kumar Pal,Seth Hubbard

doi:10.1109/pvsc.2016.7750003

Comparison of InAs/GaAs and InGaAs/GaAs quantum dot solar cells and effect of post-growth annealing on their optical properties

Debiprasad Panda, Samim Sardar + Show 4 more

https://doi.org/10.1109/pvsc.2016.7750003

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Publication Date: Jun 1, 2016

Citations: 6

Affiliation: Indian Institute of Technology Bombay, S.N. Bose National Centre for Basic Sciences, Rochester Institute of Technology

#Quantum Dot Solar Cells #Effect Of Rapid Thermal Annealing + Show 8 more

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Abstract

We have reported InAs/GaAs and InGaAs/GaAs quantum dot solar cells (QDSCs) and the effect of rapid thermal annealing (RTA) on their optical properties. A thermal stability was observed up to 700°C, and further increase in temperature results in a blue shift in photoluminescence (PL) emission peak. A maximum open circuit voltage (Voc) of 0.33V was obtained for the InGaAs/GaAs solar cell (SC), whereas a maximum short circuit current (Jsc) of 20 mA/cm2 was obtained for the InAs/GaAs SC. A fill factor (FF) of 0.31, and 3.0758% efficiency was obtained for the InGaAs/GaAs SC which is higher than the InAs/GaAs QDSC.

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