Abstract
The RF performance degradation of silicon-on-insulator (SOI) MOSFETs with H-gate and T-gate structures after hot carrier stressing has been investigated. Our experimental results show that the RF performance degradation is more significant than the dc performance degradation after hot carrier stressing. Also, the degradation of the H-gate device is more significant than that of the T-gate device due to the higher drain current. Since the degradation of minimum noise figure is the most significant, the hot carrier effects should be taken into account in the design of LNA using the H-gate device although its RF performance is better than that of the T-gate device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
