RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects

Abstract

RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are investigated. The attained nMOSFETs RF performances are 132-GHz f T and 44-GHz f max . In addition to RF figures of merit (FOM, f T and f max ), variation of capacitance and resistance is monitored to study hot carrier effects.