Abstract
An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk GaAs, InAs and In0.3Ga0.7As. In particular, velocity overshoot and electron transit times are examined. We find the steady state velocity of the electrons is the most important factor determining transit time over distances longer then 0.2 μm. Over shorter distances velocity overshoot effects in InAs and In0.3Ga0.7 As at high fields are comparable to those in GaAs. We estimate the minimum transit time across a 1 μm InAs sample to be about 4.2 ps. Similar calculations for In0.3Ga0.7As yield 6 ps (for GaAs yield 10 ps). Calculations are made using a nonparabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models.
Highlights
The Ensemble Monte Carlo technique has been used for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews
The particle-based picture, in which the particle motion is decomposed into free flights terminated by instantaneous collisions, is basically the same picture underlying the derivation of the semi-classical BTE
It may be shown that the one-particle distribution function obtained from the random walk Monte Carlo technique satisfies the BTE for a homogeneous system in the long-time limit [1]
Summary
The Ensemble Monte Carlo technique has been used for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to simulate the stochastic motion of particles subject to collision processes in some medium. This process of random walk generation may be used to evaluate integral equations and is connected to the general random sampling technique used in the valuation of multi-dimensional integrals. The basic technique is to simulate the free particle motion (referred to as the free flight) terminated by instantaneous random scattering events. It may be shown that the one-particle distribution function obtained from the random walk Monte Carlo technique satisfies the BTE for a homogeneous system in the long-time limit [1]
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