Abstract

The QFN package dominates IC industry with a small number of IOs due to its simplicity, maturity and low cost in mass production. However, as the industry progresses toward portability and smaller size, thinner and more compact packages such as Fan Out Wafer Level Package (FOWLP) is a better option/solution than QFN package. Due to its flip chip configuration, imbedded redistribution (RDL) interconnection and elimination of die attach layer, the FOWLP package has potential to surpass QFN package in thermal performance. This paper utilized a typical 3-stage RF power amplifier die as a thermal test vehicle, packaged with FOWLP and QFN, built FEA (Finite Element Analysis) thermal models and analyzed the thermal performance by thermal resistance breakdown and thermal bottleneck identification. Comparison of FOWLP and QFN shows that the heat paths and bottlenecks within each package are quite different. In QFN package, bottleneck lies in the die attach layer while in FOWLP package, it lies in the backend layers on the die and the RDL vias. FOWLP package may also require better thermal vias performance in PCB due to smaller footprint of LGA/Solder. Large horizontal heat spreading in a poorly design PCB may offset the thermal advantages in FOWLP package. The simulation results of both packages have good correlation with Infrared (IR) measurement of corresponding thermal test vehicles.

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