Abstract
In this study, we compared the C 4F 6 and C 4F 8 based plasma etching characteristics of silicon dioxide and ArF photoresist (PR) in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher under different high- and low-frequency combinations ( f HF/ f LF), while varying the process parameters such as the dc self-bias voltage ( V dc), O 2 flow, and CH 2F 2 flow rate in the C 4F 8/CH 2F 2/O 2/Ar and C 4F 6/CH 2F 2/O 2/Ar plasmas. The silicon oxide etch rates increased significantly in both chemistries with increasing f HF and O 2 flow rate. The silicon oxide etch rates were higher in the C 4F 8/CH 2F 2/O 2/Ar than in the C 4F 6/CH 2F 2/O 2/Ar plasmas, but the PR etch rate was much higher in the C 4F 6/CH 2F 2/O 2/Ar than in the C 4F 8/CH 2F 2/O 2/Ar plasmas under the present experimental conditions. The slower oxide etch rate in the C 4F 6 based plasmas was attributed to the thicker steady-state fluorocarbon layer on the silicon oxide surface, while the faster PR etch rate in the C 4F 8 based plasmas was ascribed to the higher F radical density in the plasma.
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