Comparison of ESD Immunity Between GaAs-Based LNA and SiGe-Based LNA

Abstract

The comparison of electrostatic discharge (ESD) immunity is studied between a GaAs-based low-noise amplifier (LNA) and SiGe-based LNA, both operating at 850 MHz, a typical application being a mobile communications system. It analyzes the ESD effect, which occurs within communication components, such as LNA, and describes testing standard and methods. ESD test was done according to IEC61000-4-2 and MIL-Std 1686 standards in the contact mode. For further analysis on ESD test result of LNA, the effectiveness of ESD waveform into LNA was validated, using a commercial program. After the ESD test, the failed samples were carefully examined with optical microscope and environmental scanning electron microscope.