Comparison of Epitaxial Graphene on Si-face and C-face 6H-SiC

Abstract

ABSTRACTWe present atomic force microscopy (AFM), Hall-effect measurement, and Raman spectroscopy results from graphene films on 6H-SiC (0001) and (000-1) faces (Si-face and C-face, respectively) produced by radiative heating in a high vacuum furnace chamber through thermal decomposition. We observe that the formation of graphene on the two faces of SiC is different in terms of the surface morphology, graphene thickness, Hall mobility, and Raman spectra. In general, graphene films on the SiC C-face are thicker with higher mobilities than those grown on the Si-face.