Abstract
Electrical properties of Al2O3 thin films grown by atomic layer deposition on Si and GaAs substrates were characterized and compared by current–voltage and capacitance–voltage measurements. The interfacial oxide layers thicknesses, the flat band voltages and the doping levels in the semiconductor substrates were determined. The differences in dielectric constants and breakdown fields of Al2O3 films on different substrates are attributed to different energy band alignments and the existence of different oxide interfacial layers.
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