Abstract
Abstract In this study, we have examined effects of temperature and irradiation on the electrical properties of the Sn/p- Si Schottky barrier diodes by using the forward bias current–voltage (I–V) and capacitance–voltage (C–V) measurements. The electrical characteristics of the Schottky barrier diode have been investigated at 300 K, 400 K temperature and under 500 kGy gamma irradiation, respectively. The main parameters such as barrier heights (Φb), ideality factors (n), and series resistances (RS) were calculated using the I–V measurements. It has been seen that the device is sensitive to temperature and to gamma irradiation. This has been attributed to decrease in ionized dopant concentration with temperature. Furthermore, the interface state densities (NSS) as a function of energy distribution (ESS- EV) were extracted from the forward-bias I–V measurements
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