Abstract
Wire on well (WoW) structure, which is formed on a vicinal substrate, has been under consideration for a bandgap adjustor of multijunction cells. The photocurrent of a single-junction cell containing WoW is higher than that of a cell containing planar superlattice (PSL). This work provides direct evidence for the superiority of WoW over PSL in terms of the transport of photogenerated carriers. The time of flight (ToF) of the carriers that were photoexcited near the top surface of a cell was measured with photoluminescence by embedding a probe well beneath the nanostructures (WoW or PSL). The effective mobility of carriers in the nanostructures was obtained from the relationship between the ToF and the electric field applied via external bias. It was revealed that the carrier mobility in WoW was higher than that of PSL. The merit of enhanced mobility for WoW is discussed with device simulation and the potential for higher conversion efficiency is evidenced.
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