Abstract
Because of the recent interest in infrared techniques for the measurement of semiconducting material properties, a theoretical model of free carrier absorption is needed. This paper presents a comparison of some classical approximations to free carrier absorption using the minimum in reflectivity associated with plasma resonance as a criteria. Four approximations together with some numerical integrations are compared with old and new experimental data for n- and p-type silicon, n-type germanium and n-type gallium arsenide.
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