Abstract
AbstractWe measured HX‐PES (Si 1s) of ultra low energy ion implantion (I/I) samples combined with Ge pre‐amorphizaiton ion implantation (Ge‐PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As‐doped I/I sample showed higher hole density compared to as‐doped PD sample due to lower defect induced carrier trap. Ge‐PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si‐Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge‐PAI+I/I sample. Both Ge‐PAI+I/I and PD sample showed excellent recrystallization after spike RTA. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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