Abstract
We measured HX-PES (Si 1s) of ultra low energy ion implantation (I/I) samples combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si-Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge-PAI+I/I sample. Both Ge-PAI+I/I and PD sample showed excellent recrystallization after spike RTA.bonding.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.