Abstract
Abstract Both MARLOWE-based computer simulation and transport theory have been used to evaluate the depth distributions of ion range and damage in InP assuming diatomic or monoatomic (Ge-substituted) targets. Results indicate that the mean depth and straggling in both distributions are higher for the diatomic target but deviations are less than 10–15% for the cases studied: N, Zn and Bi ions in the energy range of 10 to 40 keV.
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