Abstract
Boron precipitation process and its effect on electronic properties of p-type bulk nanostructured silicon germanium (Si0.8Ge0.2) compared with large grain polycrystalline Si0.8Ge0.2 have been studied. The structures were synthesized and their thermoelectric properties were measured versus temperature during heating and cooling cycles. The experimental data showed stronger temperature variation of Seebeck coefficient, carrier concentration, and conductivity in the nanostructured Si0.8Ge0.2 compared with the polycrystalline form indicating stronger boron precipitation in this structure. The electrical properties of both samples were calculated using a multi-band semi-classical model. The theoretical calculations confirm that the increase of boron precipitation in the nanostructured Si0.8Ge0.2 is responsible for its higher thermal instability. Since the thermoelectric properties of the nanostructured sample degrade as a result of thermal cycling, the material is appropriate only for continuous operation at high temperature without cooling.
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