Abstract
We have investigated boron diffusion in Si and strained Si1−xGex, in situ doped, epitaxial layers. During inert ambient annealing at 860 °C, boron diffusion is observed to be slower in Si0.83Ge0.17 than in Si for boron concentration levels between 5×1016 and 2.5×1019 cm−3. Computer simulations of the measured boron profiles for annealed samples indicate that the effective boron diffusivity Deff in Si0.83Ge0.17 is approximately an order of magnitude lower than that in Si. This disparity is found to increase with increasing boron concentration.
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