Comparison between ZnO films grown by femtosecond and nanosecond laser ablation

Abstract

We have studied the structural properties of ZnO thin films grown on Al2O3 (00.1) single-crystal substrates by pulsed-laser deposition using either a femtosecond or a nanosecond laser. Although hexagonal ZnO films deposited on sapphire substrate were epitaxially grown in both cases, the crystalline quality was found to be very different: ZnO films grown with the femtosecond laser are characterized by a higher mosaicity, a smaller crystallite size, a larger content of defects but also smaller residual stresses than ZnO films obtained by nanosecond laser ablation. These differences can be explained according to the kinetic energy of the species evolved during laser ablation as deduced from plasma characterization with a charged-coupled device camera: close to 1 KeV in the femtosecond regime for the population species emitted from the target with the highest velocity, versus a few hundreds of eV in the case of nanosecond pulses. The high energy species irradiation associated with a femtosecond laser is likely to induce a large structural disorder together with stress relaxation during ZnO films growth.