Abstract
Abstract In order to determine the influence of X-ray induced radiation damages, surface channel PMOS devices with partially scaled 0.5 μ m design rules were fabricated using optical and X-ray lithography. With a gate oxide thickness d ox = 10 nm the X-ray processed transistors show a threshold voltage shift δV T = -10 mV, whereas transistors with d ox = 20 nm show a V T shift of δV T = -40 mV relativ to optically processed devices. The degradation under hot carrier injection in terms of deviations of δg m , δV T , δI D and δS is almost identical for both types of transistors and is in the order of 4%.
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