Abstract
This paper presents some aspects of the crystallization by ArF excimer laser pulses (λ = 193 nm, τ = 20 ns) of various energy densities (in the range 90–400 mJ cm-2) of a-Si: H films deposited by chemical vapour deposition on amorphous SiO2 substrates. The classical division of the crystallized material into a large grain layer and a fine grain layer is found with these experimental conditions but also we show that a layer with bubbles appears between the two crystallized zones. A comparison with the calculation of temperature leads us to think that crystallization cannot occur if the temperature reached at a given depth is below a temperature Tmin. This temperature may be related to the nucleation rate in a-Si.
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