Abstract
AbstractIn the experiment (111) oriented silicon plates were implanted with 80 keV Ge ions (dose 5 × 1015 cm−2) and with 150 keV Kr ions (dose 5 × 1015 cm−2). Then the samples were annealed with the pulsed excimer laser by using the sample scanning technique. The effectiveness of the annealing has been analyzed by means of double crystal X‐ray spectrometry (DCXS) and reflection high energy electron diffraction (RHEED). The results of the experiment show that the applied technique of annealing considerably improves the perfection of the structure of the implanted silicon crystals.
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