Abstract
We report a systematic study on the properties of light emission from two series of Si/SiN X and Si/SiO 2 multilayer structures prepared by plasma enhanced chemical vapor deposition (PECVD) method. The size dependence of light emission is well exhibited when the Si sublayer thickness is thinner than 4 nm and the interface states are well passivated by hydrogen. But for the oxygen terminated Si/SiO 2 multilayer structures, the oxygen modified interface states play predominant role in the properties of light emission. The evolution of the light emission properties affected by interface states was step-by-step discovered. The role of hydrogen and oxygen is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
