Comparison between furnace and rapid thermal annealed iridium silicide Schottky barrier diodes

Abstract

AbstractIridium silicide Schottky barrier diodes fabricated by low temperature rapid thermal annealing (R TA) either in vacuum or in an argon atmosphere are investigated. A comparison with furnace annealed diodes is made in terms of their electrical characteristics. An ideality index close to unity has been obtained. Measured values of Schottky barrier height were close to that reported for Ir1Si1/n type silicon diodes. An increase in series resistance with annealing time is detected for diodes fabricated in the gas atmosphere by either furnace annealing or RTA: this effect seems to be related to oxygen diffusion through the iridium layer. The effect of atmosphere control on the grown material is also significant: silicidation and a phase change from Ir1 Si1 to Ir1 Si1-75 occur at lower temperatures when the reaction atmospheres contain a lower oxygen concentration. Complete silicidation to Ir1Si1 is obtainedfor all the 400°C RTA samples, but temperatures above 450°C are required for open tube furna...