Abstract
Transparent and conductive ZnO:Al and In2O3:Sn thin films with 0.3μm thickness have been prepared by sputtering and subsequently annealed at temperatures ranging from 250 to 450°C in N2, 5% H2/N2 and air atmospheres. These samples combine high transparency (>85%) in the visible range with high electrical conductivity (>103Ω−1cm−1) and plasmonic absorption in the near-infrared region, which is found sensitive to the heating temperature and environment. Such sensitivity has been related to oxidation state changes observed by X-ray photoelectron spectroscopy in the respective Zn–O and In–O bonds, since this modifies intrinsic doping by annihilation or creation of donor oxygen vacancies. The infrared plasmonic characteristics (plasma and damping energies) along with the ultraviolet absorption onset (band-gap energy) have been analyzed as a function of the carrier concentration and mobility determined by Hall-effect measurements. Assuming analogous non-parabolicity factors for the conduction band of both materials, the experimental results are consistent with lower permittivity values for ZnO:Al than for In2O3:Sn samples.
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