Abstract
Ni films were deposited on anodic aluminum oxide (AAO) and SiO2/Si(100) substrates at 300K by direct current magnetron sputtering with the oblique target. The film thickness was 80nm, 160nm and 260nm. The films grown on AAO substrates have a network structure while those deposited on SiO2/Si(100) substrates are continuous. The network film consists of granules and is formed by granule connection. The granule consists of many fine grains. The granule size increases with increasing film thickness. The 80nm-thick network film has a honeycomb-like structure. The continuous films grow with a columnar structure and the transverse size of columnar grains increases with increasing film thickness. All the network films show a Ni(111) diffraction peak while the 160nm- and 260nm-thick continuous films exhibit the Ni(111) and Ni(200) diffraction peaks. The network films have higher coercivity and residual magnetization ratio compared with the continuous films. The coercivity and the residual magnetization ratio increase with increasing film thickness for the network films while they are almost independent of the film thickness for the continuous films. A temperature dependence of the resistance within 5–200K reveals that the 80nm-thick network Ni film exhibits markedly a minimal resistance at about 40K. A logarithmic temperature dependence of the conductance is verified at temperatures below 40K. The temperature coefficient of resistance is smallest for the 80nm-thick network film and is largest for the 260nm-thick continuous film.
Published Version
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