Abstract
This paper presents a meta-parameterised approach for evaluation and comparison of Power Semiconductors Devices (PSD). General models and main PSD parameters needed for evaluation of power electronics switches are presented. Then, meta-parameterisation is performed for two PSD technologies, Si-IGBT and SiC-MOSFET. A comparative analysis based on current capability, frequency dependency and overrated factor for these PSD technologies is presented. Even more, a 50kW 2L-VSI and a 20kW DC-DC converter are considered to show how meta-parameters can be used to evaluate the impact of PSD technology on converter performance.
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