Abstract

While experimenting with the growth of metal-containing amorphous carbon (a-c:Me) thin films using two different growth processes, self-assembled multilayered structures were observed. One of the processes is a reactive magnetron sputter deposition process. The other process is a mass selective ion beam deposition process. Despite of the differences in the growth method and the growth condition, self-assembled multilayered thin films, consisting of alternating dark layer and bright layer, were obtained in both processes. Based on the consideration of energy for atomic diffusion in the thin films, the growth mechanism is discussed.

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