Comparative Study of Scaling Effects of a Double Gate Silicon and In0.47Ga0.53As MOSFET

Abstract

Nowadays technology keeps progressing and device becomes smaller for fast processing. With small dimensions the quantum mechanical effects become prominent and the device performance degrades due to severe short channel effects such as threshold voltage roll off. We study the device dimensions' effects on the performance of a double gate MOSFET for both Si and In0.47Ga0.53As channels using energy balance model with Bohm quantum potential of Silvaco simulation tool. For a 2 nm SiO2 gate oxide with 1 × 1019 cm−3source-drain doping density, the device threshold voltage close to 1.0 V and 0.57 V for Si and In0.47Ga0.53As respectively up to channel length of = 40 nm, below which the threshold voltage falls off rapidly. The channel body thickness and oxide thickness affect the threshold voltage when the channel length is below 40 nm. We observe similar dimension effects on sub-threshold slope, DIBL and ON current for both Si and In0.47Ga0.53As.