Abstract
In this paper, the emitter formation on polycrystalline silicon (with grain size of 0.5–10 μm) deposited by chemical vapour deposition (CVD) on foreign substrates (thermal SiO 2 and mullite ceramic) is studied. Phosphorus doping efficiency by POCl 3 diffusion, APCVD+drive-in diffusion, and also rapid-thermal diffusion (RTD) from spin-on doping (SOD) sources were compared. For the first time, we report on photovoltaic results obtained on RTD-diffused emitters on pc-Si active layers deposited by rapid-thermal CVD, thus opening the way to an all rapid-thermal process for solar cell fabrication.
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