Abstract
In this work, a comparative study for the n-type emitter formation in the fabrication of simple structures of crystalline silicon (c-Si) solar cells is reported. Gas and spin on dopant sources were employed in the pn junction formation of the solar cells in order to compare their performance. Phosphine (PH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) was used as n-type gas for phosphorus diffusion while the Filmtronics Spin-On Dopant SOD-P905 was used as n-type liquid source. From the results, we observed that there was a small discrepancy in the open circuit voltage, short circuit current and fill factor of the two processes, with similar efficiency. These results suggest that SOD-P905 can be used to produce low-cost silicon solar cells. Also in order to improve the efficiency of the SOD solar cells, a wet surface texturization stage was incorporated in the fabrication process.
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