Abstract
The interface morphology of GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) misoriented GaAs substrates has been investigated using high-resolution transmission electron microscopy observations. We show that the misorientation towards (111)Ga or (111)As plane leads to the same interfacial structure: monolayer height steps and terrace width variations are observed. But the results reveal that the misorientation towards the (111)Ga plane is the most favorable to a regular growth of superlattice structures, because the higher degree of correlation between the interfaces resulting from a smoothing of step edges.
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