Comparative study of initial stages of copper immersion deposition on bulk and porous silicon

Hanna Bandarenka,Sergey L Prischepa,Marco Balucani,Rosalba Fittipaldi,Vitaly Bondarenko,Paolo Nenzi,Antonio Vecchione

doi:10.1186/1556-276x-8-85

Abstract

Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.

Highlights

Electrochemical anodizing of bulk crystalline silicon (Si) at specific conditions causes the formation of chaotic or ordered pore channels in its volume [1]
In this work, our attention was paid to study the initial stages of Cu immersion deposition on porous silicon (PS) consisting of ordered cylindrical pores which are perpendicularly oriented to the surface of the original Si substrate [21]
To understand peculiarities of Cu immersion deposition on the surface of PS, we firstly studied the process on the bulk Si because the surface of the PS pores presents Si nanoplanes of different crystal orientations [10]

Summary

Introduction

Electrochemical anodizing of bulk crystalline silicon (Si) at specific conditions causes the formation of chaotic or ordered pore channels in its volume [1]. The material formed by such artificial nanostructuring is called porous silicon (PS) This porous morphological type of silicon presents an object of great interest of the scientific community because, in contrast to the bulk silicon, it demonstrates a number of peculiarities such as extremely developed surface, photo- and electroluminescence, and biocompatibility. Possession of these properties makes PS applicable to the areas of optoelectronics and display technologies, micromechanical systems, biomedicine, etc. Unlike dry methods (evaporation or sputtering), wet deposition provides deep penetration of metal atoms into pore channels [2]. Wet technologies are characterized by simplicity and low cost

Methods

Results

Conclusion