Abstract
This work is intended to compare the electron beam and gamma ray irradiation induced microstructural effects and electrical conductivity in glass Resistive Plate Chamber (RPC) detector materials with different doses. Positron annihilation lifetime spectroscopic (PALS) technique was used to analyze the irradiation induced structural modifications in the RPC detector materials. PALS analysis at lower doses indicates the increased void size with the creation of additional sites in the glass network upon both the irradiation sources. At higher irradiation doses, the reduced void size shows the enhanced chemical bonding between the tetrahedral sites of Si-O-Si and hence increases the short range order in the silica glass. The variation of DC conductivity upon both the irradiation techniques correlates well with the measured void size. Gamma ray irradiation produced more structural changes in the glass samples as compared to the electron beam irradiation.
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