Abstract
Co-evaporated Cu(In,Ga)Se 2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In 2S 3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the PVD-In 2S 3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In 2S 3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV.
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