Abstract
We report a new structure for CuInS2/In2S3 solar cell, in which both absorber and buffer layers were deposited using chemical spray pyrolysis (CSP) technique. The usual superstrate structure, having buffer layer just above ITO, was not functioning mainly due to diffusion of Cu into In2S3 layer as seen from X-ray photoelectron spectroscopy (XPS) results. However, when the configuration of the cell was ITO/CuInS2/In2S3/Ag, cell parameters obtained were Voc=0.45 V, Jsc=44.03 mA/cm2, fill factor (FF) = 29.5% and η=5.87%. Good results could be obtained by using indium sulfide thin films having maximum photosensitivity. The cell was characterized using X-ray diffraction, optical absorption, current–voltage and spectral response measurements.
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