Abstract
Original and Ar-implanted Ti-Zr-V non-evaporable getter (NEG) films were characterized using scanning electron microscope, X-ray diffractometer, electron spectroscopy for chemical analysis, and transmission electron microscopy. Similar properties and results were observed in the surface morphology, the composition, and the crystalline structure for original and implanted Ti-Zr-V films. However, the thermal activation temperature were increased for implanted films. The analysis of implanted Ti-Zr-V films revealed that defects formed in the upper layers of the films can trap diffused gaseous atoms from the surface into the Ti-Zr-V films. Therefore, the thermal activation reaction of Ti-Zr-V films would be affected due to implantation-induced defects in the films. We show directly that the thermal activation reaction of Ti-Zr-V films are changed by the existence of defects in the getter films.
Highlights
ARTICLES YOU MAY binding energy (BE) INTERESTED INLing-Hui Wu,a Ting-Chun Lin, Chia-Mu Cheng, Chin-Chun Chang, Che-Kai Chan, Shen-Yaw Perng, and I-Ching Sheng National Synchrotron Radiation Research Center, Hsinchu, 30076 Taiwan (Received 10 April 2018; accepted 18 July 2018; published online 26 July 2018)
Current design choices for accelerator vacuum chambers focus on small apertures, which limit pumping efficiency
During the thermal activation process, the adsorbed atoms on the surface of getter films start to diffuse into the films or be desorbed from the surface resulting in metallic bonds on the surface
Summary
Ling-Hui Wu,a Ting-Chun Lin, Chia-Mu Cheng, Chin-Chun Chang, Che-Kai Chan, Shen-Yaw Perng, and I-Ching Sheng National Synchrotron Radiation Research Center, Hsinchu, 30076 Taiwan (Received 10 April 2018; accepted 18 July 2018; published online 26 July 2018)
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