Abstract
This paper reports the detailed comparison of packaged level, 6.5 kV rated 4H-SiC power MOSFET, MOSFET co-packaged with JBS diode (Co-Pack), and monolithically integrated 6.5 kV 4H-SiC MOSFET and JBS diode (JBSFET). JBSFET was designed to disable the PN turn for reliability purposes and save the chip and process cost from the one-chip integration and single metal scheme. Static and dynamic electrical characteristics of stand-alone MOSFET, Co-Pack, and JBSFET are compared to signify the benefit of JBSFET in terms of performance, reliability, and economical point of view.
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