Abstract
This work investigates improved performance of dilute-antimony-channel high-electron mobility transistors (HEMTs), grown by a molecular beam epitaxy system, with or silicon nitride passivations. With the advantageous dilute-antimony-channel design to effectively improve the carrier transport property and carrier confinement capability and the sulfur passivation technique to annihilate the surface states, the proposed -passivated HEMT has demonstrated superior amplification, breakdown, and power performances, with high-temperature threshold stability. It is suitable for high-gain and high-power millimeter-wave integrated circuit applications.
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