Abstract
A δ-doped metamorphic high electron mobility transistor with an channel to effectively relieve the impact-ionization effects has been successfully fabricated by the molecular beam epitaxy system. With the designs of an channel layer and a wide-bangap Schottky-contact layer, good carrier confinement, improved breakdown, low output conductance, and high voltage gain with good linearity have been simultaneously achieved. We have also comprehensively investigated the microwave and power performances as a function of and , respectively. Experimentally, the unity-gain cutoff frequency and the maximum oscillation frequency slightly decrease with of above . However, the power gain and the output power increase as increases from 1 to . Furthermore, the proposed device has also demonstrated good intermodulation distortion characteristics at lower biases, indicating its promise for the large-scale and low-voltage millimeter-wave integrated circuit applications.
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