Abstract
This work provides comparative studies of a double δ-doped symmetrically graded doped-channel field-effect transistor (DD-DCFET) with respect to a conventional double δ-doped pseudomorphic high electron mobility transistor (pHEMT) and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition (LP-MOCVD) system, have identical layer structures except for their different doping schemes. Comprehensive investigations on the static, microwave, and temperature-dependent characteristics have been made. Possessing the advantages of DCFETs and pHEMTs, the proposed DD-DCFET has demonstrated comprehensively superior linearity, current drive, voltage gain, high-frequency characteristics, and thermal stability characteristics. It is promisingly suitable for millimeter-wave integrated circuit applications.
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