Abstract
In this paper, undoped, Al-, and In-doped zinc oxide thin films were deposited. Film growth was performed using the sol–gel technique. The method included (a) preparing homogeneous and stable solutions of zinc acetate 2-hydrate, (b) mixing them with aluminum nitrate and indium acetate in 2-methoxyethanol and 2-aminoethanol solutions with various concentrations, and (c) spin coating them onto transparent glass substrates. After thermal annealing, the films showed a high transparency (80–90%) and good stability. Using typical diagnostic tools, the structural, morphological, optical, and electrical film properties were investigated and linked to the dopant type, and concentrations in view of optoelectronics were investigated.
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