Abstract
We report on comparative studies of transparent conductive Ti-, Zr-, and Sn-doped In2O3 using a combinatorial approach. In2−2xMe2xO3 (Me:Ti, Zr, Sn) composition-spread epilayers (0≤x≤0.1) were fabricated on yttria-stabilized zirconia substrates using the combinatorial pulsed laser deposition technique, and structural, optical, and electrical properties for each composition were systematically investigated. In2−2xTi2xO3 (0.003≤x<0.01) and In2−2xZr2xO3 (0.003≤x<0.05) exhibited superior transparency in the near infrared wavelength region compared to In2−2xSn2xO3 without compromising the conductivity. The results are discussed in terms of scattering centers of electrons from temperature dependence of Hall mobility and the relationship between the values of the room temperature Hall mobility and carrier concentration.
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