Abstract

Quick growth optimization of complex oxide, Y-type magnetoplumbite (Ba 2Co 2Fe 12O 22 (Co 2Y)) thin films is demonstrated by using combinatorial thin film technology. Planning a CoO buffer layer on MgAl 2O 4(1 1 1) substrate was found to be very effective for preventing the phase separation of Co deficient impurity (BaFe 2O 4) and forming the desired Co 2Y phase. The combinatorial pulsed laser deposition and subsequent concurrent X-ray diffraction facilitate the production of Y-type magnetoplumbite thin film in a single phase.

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