Comparative studies of metal‐organic decomposed Ga x Ce y O z and CeO 2 based functional MOS capacitor

Abstract

A comparison between metal-organic decomposed GaxCeyOz and CeO2 passivation layers subjected to post-deposition annealing at 800°C in oxygen ambient was presented. Mitigation in the formation of positively charged oxygen vacancies in GaxCeyOz layer was disclosed by the grazing incidence X-ray diffraction characterization as well as the acquisition of a lower value of positive effective oxide charge (Qeff) than CeO2 layer. In addition, GaxCeyOz layer was able to sustain a higher electric breakdown field and a lower leakage current density due to the attainment of a lower interface trap density extracted using Terman's and high-low methods, slow trap density, and Qeff when compared with CeO2 layer.