Abstract
The downscaling of the SOI-MOSFET device has an important role of the advanced technology in the semiconductor industry, so the researchers aim to find the structure which can improve the considerable reduction, this paper is investigated a proposal novel device in the nanoscale technology of the double-gate FinFET using different high-k materials gate (SiO2, SnO2, ZrO2 and Ta2O5) for the ultra-short gate Lg = 5 nm on different parameters such as: the subthreshold voltage (SS), the threshold voltage (Vth), the transconductance (gm), the ON and OFF currents (Ion, Ioff) and also the Ion/Ioff ratio and the electrical field (E) by the three-dimensional TCAD-SILVACO simulator. The results reveal that the Ta2O5 material of gate with high permittivity (k = 27) turns out better values for (Vth, SS, ON, OFF current and ON/OFF ratio current, gm, electrical field (E)) in comparison with other dielectric SiO2, SnO2, ZrO2 which improve the performance of the device
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