Comparative performance evaluations of IGBTs and MCT incorporated into voltage‐source‐type single‐ended quasi‐resonant zero‐voltage soft switching inverter

Abstract

AbstractA cost‐effective high‐efficiency, simple, low‐noise voltage‐source‐type single‐ended quasi‐resonant high‐frequency inverter using a single power semiconductor switching device and its modified circuit topologies are commonly applied to consumer induction‐heated rice cookers with a warmer function, cooking heaters, and microwave ovens. This paper presents some comparative performance evaluations of several generations of IGBTs and MCT (MOS Controlled Thyristor) incorporated into the typical voltage‐source quasi‐resonant inverter operating in zero‐voltage soft switching transition mode. The latest generation of IGBT upgraded by lowering the saturation voltage characteristics was designed for consumer power applications in order to reduce conduction losses. The comparative steady‐state characteristics of some simple power semiconductor switching devices of several generations of IGBTs are examined on the basis of the simplest single‐ended quasi‐resonant inverter circuit operating under the zero‐voltage soft switching commutating principle. In addition, the power losses and temperature performance analysis of the latest IGBT are discussed and evaluated relative to previously developed IGBTs. Finally, the further reduced saturation voltage and conduction loss characteristics of MCT which are more suitable for consumer utilizations are presented in comparison with the conventional IGBT. © 2003 Wiley Periodicals, Inc. Electr Eng Jpn, 144(3): 58–68, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.10151