Comparative performance evaluations of IGBTs and MCT in single-ended quasi-resonant zero voltage soft switching inverter

Abstract

The simple and low-cost operation at zero voltage soft commutation voltage-fed quasi-resonant PFM inverter is widely used, which is more suitable and cost effective for consumer induction heated cooking appliances. This paper presents feasible performance evaluations of each generation IGBT developed and MOS controlled thyristor (MCT) incorporated into the simplest voltage source type quasi-resonant PFM inverter operating in zero voltage soft switching transition mode for induction heated loads. New generation IGBT in addition to MCT have been improved in order to reduce their conduction power losses which are based on their lowered saturation voltage characteristics in addition to high current density. In the first place, each generation IGBT is respectively built and tested on the basis of a single-ended quasi-resonant PFM inverter circuit operating at zero voltage soft switching commutation. In the second place, the power loss-temperature analysis of the latest IGBT with a trench-gate structure is discussed and evaluated from an experimental point of view. In the third place, the further reduced saturation voltage and conduction power loss characteristics of attractive MCT are presented in comparison with the 3rd generation IGBT by using zero voltage high current density soft-switching inverter for consumer high frequency power application.