Abstract
AbstractSilicon carbide and gallium nitride based Schottky and pin junction power rectifiers offer different performance trade‐offs in terms of metrics such as forward voltage drop, switching energy loss and surge current capability. The goal of this paper is to identify the application space for different rectifier technologies. An analytical comparison between the performance of different power rectifier diodes for breakdown voltages ranging from 600V to over 8 kV is presented. It is shown that although GaN SBD offers some advantage over SiC diodes due to lower losses, low surge current capability of GaN may hinder its widespread adoption in applications. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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