Abstract
Comparative analysis of optical characteristics of In0.08Ga0.92N∕In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates.
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